ECC DRAM

DDR1

ECC DDR1 I'M Intelligent Memory ECC DRAM components come with an integrated ECC error correction algorithm that detects and corrects single-bit errors on the fly, elevating your application to new levels of memory reliability as known from servers.
ECC DRAMs are direct drop-in-replacements for conventional DRAMs and do not require any software or hardware adaptions. The data-correction is performed by the DRAM itself without any noticable delays or latencies, and completely independent from the processor.
Customers using the I'M ECC DRAM may promote their applications utilizing the I'M ECC Protected badge.

We offer our ECC DRAM products with operation temperature ranges up to 125° C (X-Grade).

Parametric DRAM Search DRAM Cross Reference Search ECC DRAM product brochure


Please click on the part number below to view its specifications and download the datasheet
  • Part No.
  • Capacity
  • Organization
  • Voltage
  • Package
  • Status
  • Speed
  • Temperature
  • Datasheet

IME1G16D1CEB

Technical Specifications

Capacity: 1Gb
Organization: x16
Package: FBGA60
Voltage: 2.5V
Status: in production
RoHS: Yes
Part No. Green Version: IME1G16D1CEBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR-333 166Mhz 6ns
DDR-400 200MHz 5ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

C: 0°C to 70°C tA
I: -40°C to 85°C tA
H: -40°C to 105°C tA
X: -40°C to 125°C tA
tA = Ambient (Room) temperature

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Datasheet
Datasheet version 2.0 / 24.11.2015
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IME1G08D1CEB

Technical Specifications

Capacity: 1Gb
Organization: x8
Package: FBGA60
Voltage: 2.5V
Status: in production
RoHS: Yes
Part No. Green Version: IME1G08D1CEBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR-333 166Mhz 6ns
DDR-400 200MHz 5ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

C: 0°C to 70°C tA
I: -40°C to 85°C tA
H: -40°C to 105°C tA
X: -40°C to 125°C tA
tA = Ambient (Room) temperature

Download

Datasheet
Datasheet version 2.0 / 24.11.2015
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IME1G16D1CET

Technical Specifications

Capacity: 1Gb
Organization: x16
Package: TSOP 66
Voltage: 2.5V
Status: in production
RoHS: Yes
Part No. Green Version: IME1G16D1CETG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR-333 166Mhz 6ns
DDR-400 200MHz 5ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

C: 0°C to 70°C tA
I: -40°C to 85°C tA
H: -40°C to 105°C tA
X: -40°C to 125°C tA
tA = Ambient (Room) temperature

Download

Datasheet
Datasheet version 2.0 / 20.04.2016
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IME1G08D1CET

Technical Specifications

Capacity: 1Gb
Organization: x8
Package: TSOP 66
Voltage: 2.5V
Status: in production
RoHS: Yes
Part No. Green Version: IME1G08D1CETG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR-333 166Mhz 6ns
DDR-400 200MHz 5ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

C: 0°C to 70°C tA
I: -40°C to 85°C tA
H: -40°C to 105°C tA
X: -40°C to 125°C tA
tA = Ambient (Room) temperature

Download

Datasheet
Datasheet version 2.0 / 20.04.2016
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eXtra Robustness ECC Models

  • Part No.
  • Capacity
  • Organization
  • Voltage
  • Package
  • Status
  • Speed
  • Temperature
  • Datasheet

IMX5108D1CET

Technical Specifications

Capacity: 512Mb
Organization: x8
Package: TSOP 66
Voltage: 2.5V
Status: in production
RoHS: Yes
Part No. Green Version: IMX5108D1CETG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR-333 166Mhz 6ns
DDR-400 200MHz 5ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

C: 0°C to 70°C tA
I: -40°C to 85°C tA
H: -40°C to 105°C tA
X: -40°C to 125°C tA
tA = Ambient (Room) temperature

Download

Datasheet
Datasheet version 2.0 / 06.05.2016
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IMX5116D1CET

Technical Specifications

Capacity: 512Mb
Organization: x16
Package: TSOP 66
Voltage: 2.5V
Status: in production
RoHS: Yes
Part No. Green Version: IMX5116D1CETG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR-333 166Mhz 6ns
DDR-400 200MHz 5ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

C: 0°C to 70°C tA
I: -40°C to 85°C tA
H: -40°C to 105°C tA
X: -40°C to 125°C tA
tA = Ambient (Room) temperature

Download

Datasheet
Datasheet version 2.0 / 06.05.2016
Part No. Decoder
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IMX5108D1CEB

Technical Specifications

Capacity: 512Mb
Organization: x8
Package: FBGA 60
Voltage: 2.5V
Status: in production
RoHS: Yes
Part No. Green Version: IMX5108D1CEBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR-333 166Mhz 6ns
DDR-400 200MHz 5ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

C: 0°C to 70°C tA
I: -40°C to 85°C tA
H: -40°C to 105°C tA
X: -40°C to 125°C tA
tA = Ambient (Room) temperature

Download

Datasheet
Datasheet version 1.0 / 24.11.2015
Part No. Decoder
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IMX5116D1CEB

Technical Specifications

Capacity: 512Mb
Organization: x16
Package: FBGA 60
Voltage: 2.5V
Status: in production
RoHS: Yes
Part No. Green Version: IMX5116D1CEBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR-333 166Mhz 6ns
DDR-400 200MHz 5ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

C: 0°C to 70°C tA
I: -40°C to 85°C tA
H: -40°C to 105°C tA
X: -40°C to 125°C tA
tA = Ambient (Room) temperature

Download

Datasheet
Datasheet version 1.0 / 24.11.2015
Part No. Decoder
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DRAM Models

  • Part No.
  • Capacity
  • Organization
  • Voltage
  • Package
  • Status
  • Speed
  • Temperature
  • Datasheet

IM5108D1CFB

Technical Specifications

Capacity: 512Mb
Organization: x8
Package: FBGA 60
Voltage: 2.5V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT46V64M8CY, MT46V64M8CV, MT46V64M8BN, MT46V64M8FN, SK Hynix H5DU5182EFR, Samsung K4H510838J-B
Part No. Green Version: IM5108D1CFBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR1-400 200MHz@CL3 5ns
DDR1-333 166MHz@CL3 6ns
DDR1-266 133MHz@CL3 6ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 70°C tA
I: -40°C to 85°C tA
tA = Ambient (Room) temperature

Download

Datasheet
Datasheet version 1.2 / 15.07.2015
Part No. Decoder
Environmental Informations
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IM5116D1CFB

Technical Specifications

Capacity: 512Mb
Organization: x16
Package: FBGA 60
Voltage: 2.5V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT46V32M16CY, MT46V32M16CV, MT46V32M16BN, MT46V32M16FN, SK Hynix H5DU5162EFR, Samsung K4H511638J-B
Part No. Green Version: IM5116D1CFBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR1-400 200MHz@CL3 5ns
DDR1-333 166MHz@CL3 6ns
DDR1-266 133MHz@CL3 6ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 70°C tA
I: -40°C to 85°C tA
tA = Ambient (Room) temperature

Download

Datasheet
Datasheet version 1.2 / 15.07.2015
Part No. Decoder
Environmental Informations
REACH Notification
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IM5116D1CDT

Technical Specifications

Capacity: 512Mb
Organization: x16
Package: TSOP 66 Pin
Voltage: 2.5V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT46V32M16P, MT46V32M16TG, SK Hynix H5DU5162ETR, Samsung K4H511638J-T
Part No. Green Version: IM5116D1CDTG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR1-400 200MHz@CL3 5ns
DDR1-500 250MHz@CL3 4ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 70°C tA
I: -40°C to 85°C tA
tA = Ambient (Room) temperature

Download

Datasheet
Datasheet version 2.0 / 21.05.2015
Part No. Decoder
Environmental Informations
REACH Notification
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IM5108D1CDT

Technical Specifications

Capacity: 512Mb
Organization: x8
Package: TSOP 66 Pin
Voltage: 2.5V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT46V64M8P, MT46V64M8TG, SK Hynix H5DU5182ETR, Samsung K4H510838J-T
Part No. Green Version: IM5108D1CDTG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR1-400 200MHz@CL3 5ns
DDR1-500 250MHz@CL3 4ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 70°C tA
I: -40°C to 85°C tA
tA = Ambient (Room) temperature

Download

Datasheet
Datasheet version 2.0 / 21.05.2015
Part No. Decoder
Environmental Informations
REACH Notification
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* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

ECC DRAMs are memory components with integrated error-correction logic. The ECC DRAMs internally generate parity-data for each data-block of 64 bit which allow to detect and correct single bit errors within each 64-bit internal data-block. As an example, a 1 Gigabit ECC DRAM internally consists of 16 million blocks of 64 bit. Even in the extremely rare case that each and every block would have a single bit error, the DRAM would still work perfectly as the ECC algorithm will correct all these errors. The error-correction algorithm is identical to what is used on server-memory-modules, but servers perform this algorithm by the CPU, while the ECC DRAMs perform the algorithm in the DRAM-chip itself. This is why ECC DRAMs make it possible to add a 'server level memory reliability' to any application, even if the CPU on your application is unable to perform ECC-correction.

With the ECC DRAM we did not change the technology used to manufacture the memory-array of the DRAMs, but we added a validation and correction algorithm to the device-internal logic.

Intelligent Memory´s ECC eXtra Robust DRAM components utilize a physical protection to the stored data-bits by holding the bits in larger capacitors, with a redundant data topology combined with built-in error correction features.

Explanation:
Each databit of a DRAM is stored in a very small capacitor holding a minimal electron-charge that defines the databit to be Zero or One. The data-integrity completely depends on these little capacitor-charges. On eXtra Robustness ECC DRAM each two cells are being 'twinned' to hold one databit, doubling the total electron-charge. As a result, the retention-time of each cell increases exponentially. Even increased leakage after cell-degradation does not cause a data-loss anymore as there is a much higher charge in each cell. External influences through radiation, antennas, etc can hardly flip the databits any more. The signal-margins (difference of charge-level for a Zero or a One) are much greater.

The eXtra Robustness (XR) DRAMs also have the ECC error correction functionality. In the very rare case that an XR ECC DRAM should have a bit-flip, the error-correction will catch and correct it. They are the most reliable DRAMs available.