ECC DRAM

DDR2

 I'M Intelligent Memory ECC DRAM components come with an integrated ECC error correction algorithm that detects and corrects single-bit errors on the fly, elevating your application to new levels of memory reliability as known from servers.
ECC DRAMs are direct drop-in-replacements for conventional DRAMs and do not require any software or hardware adaptions. The data-correction is performed by the DRAM itself without any noticable delays or latencies, and completely independent from the processor.
Customers using the I'M ECC DRAM may promote their applications utilizing the I'M ECC Protected badge.

We offer our ECC DRAM products with operation temperature ranges up to 125° C (X-Grade). Optionally with Grade 1 AEC-Q100 qualification.

Parametric DRAM Search DRAM Cross Reference Search ECC DRAM product brochure


Please click on the part number below to view its specifications and download the datasheet
  • Part No.
  • Capacity
  • Organization
  • Voltage
  • Package
  • Status
  • Speed
  • Temperature
  • Datasheet

IME1G16D2DEB

Technical Specifications

Capacity: 1Gb
Organization: x16
Package: FBGA 84
Voltage: 1.8V
Status: in production
RoHS: Yes
Part No. Green Version: IME1G16D2DEBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR2-667 333Mhz 3ns
DDR2-800 400MHz 2.5ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
H: -40°C to 105°C tC
X: -40°C to 125°C tC
tC = Operating Case temperature

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Datasheet
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IME1G08D2DEB

Technical Specifications

Capacity: 1Gb
Organization: x8
Package: FBGA 60
Voltage: 1.8V
Status: in production
RoHS: Yes
Part No. Green Version: IME1G08D2DEBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR2-667 333Mhz 3ns
DDR2-800 400MHz 2.5ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
H: -40°C to 105°C tC
X: ^-40°C to 125°C tC
tC = Operating Case temperature

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eXtra Robustness ECC Models

  • Part No.
  • Capacity
  • Organization
  • Voltage
  • Package
  • Status
  • Speed
  • Temperature
  • Datasheet

IMX5116D2DEB

Technical Specifications

Capacity: 512Mb
Organization: x16
Package: FBGA 84
Voltage: 1.8V
Status: in production
RoHS: Yes
Part No. Green Version: IMX5116D2DEBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-333 333Mhz 3ns
DDR2-800 400MHz 2.5ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
H: -40°C to 105°C tC
X: -40°C to 125°C tC
tC = Operating Case temperature

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Datasheet
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IMX5108D2DEB

Technical Specifications

Capacity: 512Mb
Organization: x8
Package: FBGA 60
Voltage: 1.8V
Status: in production
RoHS: Yes
Part No. Green Version: IMX5108D2DEBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-333 333Mhz 3ns
DDR2-800 400MHz 2.5ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
H: -40°C to 105°C tC
X: -40°C to 125°C tC
tC = Operating Case temperature

Download

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SDRAM Models

  • Part No.
  • Capacity
  • Organization
  • Voltage
  • Package
  • Status
  • Speed
  • Temperature
  • Datasheet

IM2G04D2DAB

Technical Specifications

Capacity: 2Gb
Organization: x4
Package: FBGA 60 ball
Voltage: 1.8V
Status: EOL
RoHS: Yes
Compatible/
Cross to:
Micron MT47H512M4EB, MT47H512M4HG
Part No. Green Version: IM2G04D2DABG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR2-667 333MHz 3ns
DDR2-800 400MHz 2.5ns
DDR2-1066 533MHz 1.875ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
Datasheet version 1.1 / 10.09.2014
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IM2G04D2DBB

Technical Specifications

Capacity: 2Gb
Organization: x4
Package: FBGA 60 ball
Voltage: 1.8V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT47H512M4EB, MT47H512M4HG
Part No. Green Version: IM2G04D2DBBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR2-533 266MHz 3.75ns
DDR2-667 333MHz 3ns
DDR2-800 400MHz 2.5ns
DDR2-1066 533MHz 1.875ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
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IM2G08D2DBB

Technical Specifications

Capacity: 2Gb
Organization: x8
Package: FBGA 60 ball
Voltage: 1.8V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT47H256M8EB, MT47H256M8HG
Part No. Green Version: IM2G08D2DBBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR2-533 266MHz 3.75ns
DDR2-667 333MHz 3ns
DDR2-800 400MHz 2.5ns
DDR2-1066 533MHz 1.875ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
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IM2G16D2DBB

Technical Specifications

Capacity: 2Gb
Organization: x16
Package: FBGA 84 ball
Voltage: 1.8V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT47H128M16RT, MT47H128M16HG, MT47H128M16PK
Part No. Green Version: IM2G16D2DBBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR2-533 266MHz 3.75ns
DDR2-667 333MHz 3ns
DDR2-800 400MHz 2.5ns
DDR2-1066 533MHz 1.875ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
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IM2G08D2DCD

Technical Specifications

Capacity: 2Gb
Organization: x8/2CS
Package: FBGA63
Voltage: 1.8V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT47H256M8THN
Part No. Green Version: IM2G08D2DCDG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR2-533 266MHz 3.75ns
DDR2-667 333MHz 3ns
DDR2-800 400MHz 2.5ns
DDR2-1066 533MHz 1.875ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
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IM2G08D2DAB

Technical Specifications

Capacity: 2Gb
Organization: x8
Package: FBGA 60 ball
Voltage: 1.8V
Status: EOL
RoHS: Yes
Part No. Green Version: IM2G08D2DABG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR2-667 333MHz 3ns
DDR2-800 400MHz 2.5ns
DDR2-1066 533MHz 1.875ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

Download

IM2G16D2DAB

Technical Specifications

Capacity: 2Gb
Organization: x16
Package: FBGA 84 ball
Voltage: 1.8V
Status: EOL
RoHS: Yes
Part No. Green Version: IM2G16D2DABG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR2-667 333MHz 3ns
DDR2-800 400MHz 2.5ns
DDR2-1066 533MHz 1.875ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

Download

Datasheet
Datasheet version 1.1 / 10.09.2014
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IM1G08D2DCB

Technical Specifications

Capacity: 1Gb
Organization: x8
Package: FBGA 60
Voltage: 1.8V
Status: In Production
RoHS: Yes
Part No. Green Version: IM1G08D2DCBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR2-800 400MHz 2.5ns
DDR2-1066 533MHz 1.875ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

Download

Datasheet
Datasheet version 3.0 / 20.03.2017
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IM1G08D2DDB

Technical Specifications

Capacity: 1Gb
Organization: x8
Package: FBGA 60
Voltage: 1.8V
Status: In Production
RoHS: Yes
Part No. Green Version: IM1G08D2DDBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR2-800 400MHz 2.5ns
DDR2-1066 533MHz 1.875ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
tC = Operating Case temperature

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Datasheet
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IM1G16D2DCB

Technical Specifications

Capacity: 1Gb
Organization: x16
Package: FBGA 84
Voltage: 1.8V
Status: In Production
RoHS: Yes
Part No. Green Version: IM1G16D2DCBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR2-800 400MHz 2.5ns
DDR2-1066 533MHz 1.875ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

Download

Datasheet
Datasheet version 3.0 / 20.03.2017
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IM1G16D2DDB

Technical Specifications

Capacity: 1Gb
Organization: x16
Package: FBGA 84
Voltage: 1.8V
Status: In Production
RoHS: Yes
Part No. Green Version: IM1G16D2DDBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR2-800 400MHz 2.5ns
DDR2-1066 533MHz 1.875ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
tC = Operating Case temperature

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IM5116D2DAB

Technical Specifications

Capacity: 512Mb
Organization: x16
Package: FBGA 84 ball
Voltage: 1.8V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT47H32M16HR, MT47H32M16NF, MT47H32M16HW, SK Hynix H5PS5162FFR, H5PS5162GFR, H5PS5162KFR, Samsung K4T51163QJ, K4T51163QG
Part No. Green Version: IM5116D2DABG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR2-667 333MHz 3ns
DDR2-800 400MHz 2.5ns
DDR2-1066 533MHz 1.875ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

Download

Datasheet
Datasheet version 2.0 / 20.03.2017
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IM5116D2DDB

Technical Specifications

Capacity: 512Mb
Organization: x16
Package: FBGA 84 ball
Voltage: 1.8V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT47H32M16HR, MT47H32M16NF, MT47H32M16HW, SK Hynix H5PS5162FFR, H5PS5162GFR, H5PS5162KFR, Samsung K4T51163QJ, K4T51163QG
Part No. Green Version: IM5116D2DDBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR2-667 333MHz 3ns
DDR2-800 400MHz 2.5ns
DDR2-1066 533MHz 1.875ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
tC = Operating Case temperature

Download

Datasheet
Datasheet version 0.1 / 20.07.2017
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* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

ECC DRAMs are memory components with integrated error-correction logic. The ECC DRAMs internally generate parity-data for each data-block of 64 bit which allow to detect and correct single bit errors within each 64-bit internal data-block. As an example, a 1 Gigabit ECC DRAM internally consists of 16 million blocks of 64 bit. Even in the extremely rare case that each and every block would have a single bit error, the DRAM would still work perfectly as the ECC algorithm will correct all these errors. The error-correction algorithm is identical to what is used on server-memory-modules, but servers perform this algorithm by the CPU, while the ECC DRAMs perform the algorithm in the DRAM-chip itself. This is why ECC DRAMs make it possible to add a 'server level memory reliability' to any application, even if the CPU on your application is unable to perform ECC-correction.

With the ECC DRAM we did not change the technology used to manufacture the memory-array of the DRAMs, but we added a validation and correction algorithm to the device-internal logic.

Intelligent Memory´s ECC eXtra Robust DRAM components utilize a physical protection to the stored data-bits by holding the bits in larger capacitors, with a redundant data topology combined with built-in error correction features.

Explanation:
Each databit of a DRAM is stored in a very small capacitor holding a minimal electron-charge that defines the databit to be Zero or One. The data-integrity completely depends on these little capacitor-charges. On eXtra Robustness ECC DRAM each two cells are being 'twinned' to hold one databit, doubling the total electron-charge. As a result, the retention-time of each cell increases exponentially. Even increased leakage after cell-degradation does not cause a data-loss anymore as there is a much higher charge in each cell. External influences through radiation, antennas, etc can hardly flip the databits any more. The signal-margins (difference of charge-level for a Zero or a One) are much greater.

The eXtra Robustness (XR) DRAMs also have the ECC error correction functionality. In the very rare case that an XR ECC DRAM should have a bit-flip, the error-correction will catch and correct it. They are the most reliable DRAMs available.