ECC DRAM

DDR3

DDR3 ECC I'M Intelligent Memory ECC DRAM components come with an integrated ECC error correction algorithm that detects and corrects single-bit errors on the fly, elevating your application to new levels of memory reliability as known from servers.
ECC DRAMs are direct drop-in-replacements for conventional DRAMs and do not require any software or hardware adaptions. The data-correction is performed by the DRAM itself without any noticable delays or latencies, and completely independent from the processor.
Customers using the I'M ECC DRAM may promote their applications utilizing the I'M ECC Protected badge.

We offer our ECC DRAM products with operation temperature ranges up to 125° C (X-Grade). Optionally with Grade 1 AEC-Q100 qualification.

Parametric DRAM Search DRAM Cross Reference Search ECC DRAM product brochure


Please click on the part number below to view its specifications and download the datasheet
  • Part No.
  • Capacity
  • Organization
  • Voltage
  • Package
  • Status
  • Speed
  • Temperature
  • Datasheet

IME1G16D3EEB

Technical Specifications

Capacity: 1Gb
Organization: x16
Package: FBGA 96
Voltage: 1.5V
Status: in production
RoHS: Yes
Part No. Green Version: IME1G16D3EEBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667Mhz 1.5ns
DDR3-1600 800MHz 1.25ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
H: -40°C to 105°C tC
X: -40°C to 125°C tC
tC = Operating Case temperature

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Datasheet
Datasheet version 2.0 / 23.01.2017
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IME1G08D3EEB

Technical Specifications

Capacity: 1Gb
Organization: x8
Package: FBGA 78
Voltage: 1.5V
Status: in production
RoHS: Yes
Part No. Green Version: IME1G08D3EEBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667Mhz 1.5ns
DDR3-1600 800MHz 1.25ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
H: -40°C to105°C tC
X: -40°C to125°C tC
tC = Operating Case temperature

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Datasheet
Datasheet version 2.0 / 23.01.2017
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eXtra Robustness ECC Models

  • Part No.
  • Capacity
  • Organization
  • Voltage
  • Package
  • Status
  • Speed
  • Temperature
  • Datasheet

IMX5116D3EEB

Technical Specifications

Capacity: 512Mb
Organization: x16
Package: FBGA 96
Voltage: 1.5V
Status: in production
RoHS: Yes
Part No. Green Version: IMX5116D3EEBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667Mhz 1.5ns
DDR3-1600 800MHz 1.25ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
H: -40°C to 105°C tC
X: -40°C to 125°C tC
tC = Operating Case temperature

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Datasheet version 0.6 / 23.01.2017
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IMX5108D3EEB

Technical Specifications

Capacity: 512Mb
Organization: x8
Package: FBGA 78
Voltage: 1.5V
Status: in production
RoHS: Yes
Part No. Green Version: IMX5108D3EEBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667Mhz 1.5ns
DDR3-1600 800MHz 1.25ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
H: -40°C to105°C tC
X: -40°C to125°C tC
tC = Operating Case temperature

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Datasheet version 0.6 / 23.01.2017
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DRAM

  • Part No.
  • Capacity
  • Organization
  • Voltage
  • Package
  • Status
  • Speed
  • Temperature
  • Datasheet

IM8G04D3EBD

Technical Specifications

Capacity: 8Gb
Organization: x4/2CS
Package: FBGA 78 ball DDP
Voltage: 1.5V
Status: NRND **
RoHS: Yes
Compatible/
Cross to:
Micron MT41J2G4TRF, SK Hynix H5TQ8G43MMR, H5TQ8G43AMR, Samsung K4B8G0446B, K4B8G0446D
Part No. Green Version: IM8G04D3EBDG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
Datasheet version 1.1 / 15.07.2015
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IM8G04D3FBD

Technical Specifications

Capacity: 8Gb
Organization: x4/2CS
Package: FBGA 78 ball DDP
Voltage: 1.35V
Status: NRND **
RoHS: Yes
Compatible/
Cross to:
Micron MT41K2G4TRF, SK Hynix H5TC8G43MMR, H5TC8G43AMR, Samsung K4B8G0446B, K4B8G0446D
Part No. Green Version: IM8G04D3FBDG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
Datasheet version 1.2 / 15.07.2015
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IM8G04D3FCD

Technical Specifications

Capacity: 8Gb
Organization: x4/2CS
Package: FBGA 78 ball DDP
Voltage: 1.35V / (1.5V)
Status: CS* May 2017
RoHS: Yes
Compatible/
Cross to:
Micron MT41K2G4TRF, SK Hynix H5TC8G43MMR, H5TC8G43AMR, Samsung K4B8G0446B, K4B8G0446D
Part No. Green Version: IM8G04D3FCDG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
Datasheet version 0.3 / 24.04.2017
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IM8G08D3EBB

Technical Specifications

Capacity: 8Gb
Organization: x8
Package: FBGA 78 ball
Voltage: 1.5V
Status: NRND **
RoHS: Yes
Part No. Green Version: IM8G08D3EBBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
Datasheet version 1.2 / 15.07.2015
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IM8G08D3FBB

Technical Specifications

Capacity: 8Gb
Organization: x8
Package: FBGA 78 ball
Voltage: 1.35V
Status: NRND **
RoHS: Yes
Part No. Green Version: IM8G08D3FBBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
Datasheet version 1.2 / 15.07.2015
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IM8G08D3FCB

Technical Specifications

Capacity: 8Gb
Organization: x8
Package: FBGA 78 ball
Voltage: 1.35V / (1.5V)
Status: CS* July 2017
RoHS: Yes
Part No. Green Version: IM8G08D3FCBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
Datasheet version 0.1 / 10.05.2017
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IM8G08D3EBD

Technical Specifications

Capacity: 8Gb
Organization: x8/2CS
Package: FBGA 78 ball DDP
Voltage: 1.5V
Status: NRND **
RoHS: Yes
Compatible/
Cross to:
Micron MT41J1G8TRF, SK Hynix H5TQ8G83MMR, H5TQ8G83AMR, Samsung K4B8G0846B, K4B8G0846D
Part No. Green Version: IM8G08D3EBDG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
Datasheet version 1.1 / 15.07.2015
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IM8G08D3FBD

Technical Specifications

Capacity: 8Gb
Organization: x8/2CS
Package: FBGA 78 ball DDP
Voltage: 1.35V
Status: NRND **
RoHS: Yes
Compatible/
Cross to:
Micron MT41K1G8TRF, SK Hynix H5TC8G83MMR, H5TC8G83AMR, Samsung K4B8G0846B, K4B8G0846D
Part No. Green Version: IM8G08D3FBDG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
Datasheet version 1.2 / 15.07.2015
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IM8G08D3FCD

Technical Specifications

Capacity: 8Gb
Organization: x8/2CS
Package: FBGA 78 ball DDP
Voltage: 1.35V / (1.5V)
Status: CS* May 2017
RoHS: Yes
Compatible/
Cross to:
Micron MT41K1G8TRF, SK Hynix H5TC8G83MMR, H5TC8G83AMR, Samsung K4B8G0846B, K4B8G0846D
Part No. Green Version: IM8G08D3FCDG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
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IM8G16D3EBB

Technical Specifications

Capacity: 8Gb
Organization: x16
Package: FBGA 96 ball
Voltage: 1.5V
Status: NRND **
RoHS: Yes
Part No. Green Version: IM8G16D3EBBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
Datasheet version 0.4 / 15.07.2015
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IM8G16D3FBB

Technical Specifications

Capacity: 8Gb
Organization: x16
Package: FBGA 96 ball
Voltage: 1.35V
Status: NRND **
RoHS: Yes
Part No. Green Version: IM8G16D3FBBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
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IM8G16D3FCB

Technical Specifications

Capacity: 8Gb
Organization: x16
Package: FBGA 96 ball
Voltage: 1.35V / (1.5V)
Status: CS* July 2017
RoHS: Yes
Part No. Green Version: IM8G16D3FCBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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IM8G16D3EBD

Technical Specifications

Capacity: 8Gb
Organization: x16/2CS
Package: FBGA 96 ball DDP
Voltage: 1.5V
Status: NRND **
RoHS: Yes
Compatible/
Cross to:
Micron MT41J512M16TNA, SK Hynix H5TQ8G63AMR, Samsung K4B8G1646B
Part No. Green Version: IM8G16D3EBDG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
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IM8G16D3FBD

Technical Specifications

Capacity: 8Gb
Organization: x16/2CS
Package: FBGA 96 ball DDP
Voltage: 1.35V
Status: NRND **
RoHS: Yes
Compatible/
Cross to:
Micron MT41K512M16TNA, SK Hynix H5TC8G63AMR, Samsung K4B8G1646B
Part No. Green Version: IM8G16D3FBDG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
Datasheet version 0.3 / 22.08.2014
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IM8G16D3FCD

Technical Specifications

Capacity: 8Gb
Organization: x16/2CS
Package: FBGA 96 ball DDP
Voltage: 1.35V / (1.5V)
Status: CS* July 2017
RoHS: Yes
Compatible/
Cross to:
Micron MT41K512M16TNA, SK Hynix H5TC8G63AMR, Samsung K4B8G1646B
Part No. Green Version: IM8G16D3FCDG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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IM8G32D3FBB

Technical Specifications

Capacity: 8Gb
Organization: x32
Package: FBGA 136 ball
Voltage: 1.35V
Status: NRND **
RoHS: Yes
Compatible/
Cross to:
Micron MT41K256M32SLD, Samsung K4B8G3346B
Part No. Green Version: IM8G32D3FBBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
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IM4G04D3EAB

Technical Specifications

Capacity: 4Gb
Organization: x4
Package: FBGA 78 ball
Voltage: 1.5V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT41J1G4RH, MT41J1G4RA, SK Hynix H5TQ4G43MFR, H5TQ4G43AFR, H5TQ4G43BFR, Samsung K4B4G0446Q, K4B4G0446B, K4B4G0446D
Part No. Green Version: IM4G04D3EABG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667Mhz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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IM4G04D3FAB

Technical Specifications

Capacity: 4Gb
Organization: x4
Package: FBGA 78 ball
Voltage: 1.35V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT41K1G4RH, MT41K1G4RA, SK Hynix H5TC4G43MFR, H5TC4G43AFR, H5TC4G43BFR, Samsung K4B4G0446Q, K4B4G0446B, K4B4G0446D
Part No. Green Version: IM4G04D3FABG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667Mhz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

IM4G08D3EAB

Technical Specifications

Capacity: 4Gb
Organization: x8
Package: FBGA 78 ball
Voltage: 1.5V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT41J512M8RH, MT41J512M8RA, SK Hynix H5TQ4G83MFR, H5TQ4G83AFR, H5TQ4G83BFR, Samsung K4B4G0846Q, K4B4G0846B, K4B4G0846D
Part No. Green Version: IM4G08D3EABG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667Mhz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
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IM4G08D3FAB

Technical Specifications

Capacity: 4Gb
Organization: x8
Package: FBGA 78 ball
Voltage: 1.35V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT41K512M8RH, MT41K512M8RA, SK Hynix H5TC4G83MFR, H5TC4G83AFR, H5TC4G83BFR, Samsung K4B4G0846Q, K4B4G0846B, K4B4G0846D
Part No. Green Version: IM4G08D3FABG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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IM4G16D3EAB

Technical Specifications

Capacity: 4Gb
Organization: x16
Package: FBGA 96 ball
Voltage: 1.5V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT41J256M16HA, MT41J256M16RE, SK Hynix H5TQ4G63MFR, H5TQ4G63AFR, H5TQ4G63BFR, Samsung K4B4G1646Q, K4B4G1646B, K4B4G1646D
Part No. Green Version: IM4G16D3EABG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
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IM4G16D3FAB

Technical Specifications

Capacity: 4Gb
Organization: x16
Package: FBGA 96 ball
Voltage: 1.35V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT41K256M16HA, MT41K256M16RE, SK Hynix H5TC4G63MFR, H5TC4G63AFR, H5TC4G63BFR, Samsung K4B4G1646Q, K4B4G1646B, K4B4G1646D
Part No. Green Version: IM4G16D3FABG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667MHz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 95°C tC
tC = Operating Case temperature

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Datasheet
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IM2G08D3EAB

Technical Specifications

Capacity: 2Gb
Organization: x8
Package: FBGA 78 ball
Voltage: 1.5V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT41J256M8 / SK-Hynix H5TQ2G83GFR / Samsung K4B2G0846
Part No. Green Version: IM2G08D3EABG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667Mhz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
DDR3-2133 1066MHz 0.938ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 105°C tC
tC = Operating Case temperature

Download

Datasheet
Datasheet version 1.0 / 06.11.2015
Part No. Decoder
Environmental Informations
REACH Notification
RoHS Notification
Statement Conflict Materials


Request Email

IM2G16D3FAB

Technical Specifications

Capacity: 2Gb
Organization: x16
Package: FBGA 96 ball
Voltage: 1.35V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT41J128M16 / SK-Hynix H5TQ2G63GFR / Samsung K4B2G1646
Part No. Green Version: IM2G16D3FABG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667Mhz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 105°C tC
tC = Operating Case temperature

Download

Datasheet
Datasheet version 1.0 / 06.11.2015
Part No. Decoder
Environmental Informations
REACH Notification
RoHS Notification
Statement Conflict Materials


Request Email

IM2G08D3FAB

Technical Specifications

Capacity: 2Gb
Organization: x8
Package: FBGA 78 ball
Voltage: 1.35V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT41J256M8 / SK-Hynix H5TQ2G83GFR / Samsung K4B2G0846
Part No. Green Version: IM2G08D3FABG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667Mhz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 105°C tC
tC = Operating Case temperature

Download

Datasheet
Datasheet version 1.0 / 06.11.2015
Part No. Decoder
Environmental Informations
REACH Notification
RoHS Notification
Statement Conflict Materials


Request Email

IM2G16D3EAB

Technical Specifications

Capacity: 2Gb
Organization: x16
Package: FBGA 96 ball
Voltage: 1.5V
Status: In Production
RoHS: Yes
Compatible/
Cross to:
Micron MT41J128M16 / SK-Hynix H5TQ2G63GFR / Samsung K4B2G1646
Part No. Green Version: IM2G16D3EABG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR3-1333 667Mhz 1.5ns
DDR3-1600 800MHz 1.25ns
DDR3-1866 933MHz 1.07ns
DDR3-2133 1066MHz 0.938ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 95°C tC
I: -40°C to 105°C tC
tC = Operating Case temperature

Download

Datasheet
Datasheet version 1.0 / 06.11.2015
Part No. Decoder
Environmental Informations
REACH Notification
RoHS Notification
Statement Conflict Materials


Request Email

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

ECC DRAMs are memory components with integrated error-correction logic. The ECC DRAMs internally generate parity-data for each data-block of 64 bit which allow to detect and correct single bit errors within each 64-bit internal data-block. As an example, a 1 Gigabit ECC DRAM internally consists of 16 million blocks of 64 bit. Even in the extremely rare case that each and every block would have a single bit error, the DRAM would still work perfectly as the ECC algorithm will correct all these errors. The error-correction algorithm is identical to what is used on server-memory-modules, but servers perform this algorithm by the CPU, while the ECC DRAMs perform the algorithm in the DRAM-chip itself. This is why ECC DRAMs make it possible to add a 'server level memory reliability' to any application, even if the CPU on your application is unable to perform ECC-correction.

With the ECC DRAM we did not change the technology used to manufacture the memory-array of the DRAMs, but we added a validation and correction algorithm to the device-internal logic.

Intelligent Memory´s ECC eXtra Robust DRAM components utilize a physical protection to the stored data-bits by holding the bits in larger capacitors, with a redundant data topology combined with built-in error correction features.

Explanation:
Each databit of a DRAM is stored in a very small capacitor holding a minimal electron-charge that defines the databit to be Zero or One. The data-integrity completely depends on these little capacitor-charges. On eXtra Robustness ECC DRAM each two cells are being 'twinned' to hold one databit, doubling the total electron-charge. As a result, the retention-time of each cell increases exponentially. Even increased leakage after cell-degradation does not cause a data-loss anymore as there is a much higher charge in each cell. External influences through radiation, antennas, etc can hardly flip the databits any more. The signal-margins (difference of charge-level for a Zero or a One) are much greater.

The eXtra Robustness (XR) DRAMs also have the ECC error correction functionality. In the very rare case that an XR ECC DRAM should have a bit-flip, the error-correction will catch and correct it. They are the most reliable DRAMs available.