ECC DRAM

Mobile DDR

ECC Mobile DDR I'M Intelligent Memory ECC DRAM components come with an integrated ECC error correction algorithm that detects and corrects single-bit errors on the fly, elevating your application to new levels of memory reliability as known from servers.
ECC DRAMs are direct drop-in-replacements for conventional DRAMs and do not require any software or hardware adaptions. The data-correction is performed by the DRAM itself without any noticable delays or latencies, and completely independent from the processor.
Customers using the I'M ECC DRAM may promote their applications utilizing the I'M ECC Protected badge.

We offer our ECC DRAM products with operation temperature ranges up to 125° C (X-Grade).

Parametric DRAM Search DRAM Cross Reference Search ECC DRAM product brochure


Please click on the part number below to view its specifications and download the datasheet
  • Part No.
  • Capacity
  • Organization
  • Voltage
  • Package
  • Status
  • Speed
  • Temperature
  • Datasheet

IME1G16MDDEB

Technical Specifications

Capacity: 1Gb
Organization: x16
Package: FBGA 60
Voltage: 1.8V
Status: In Production
RoHS: Yes
Part No. Green Version: IME1G16MDDEBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR-333 166Mhz 6ns
DDR-400 200MHz 5ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

C: 0°C to 70°C tA
I: -40°C to 85°C tA
H: -40°C to 105°C tA
X: -40°C to 125°C tA
tA = Ambient (Room) temperature

Download

Datasheet
Datasheet version 1.0 / 07.12.2015
Part No. Decoder
Environmental Informations
REACH Notification
RoHS Notification
Statement Conflict Materials


Request Email

eXtra Robustness ECC Models

  • Part No.
  • Capacity
  • Organization
  • Voltage
  • Package
  • Status
  • Speed
  • Temperature
  • Datasheet

IMX5116MDDEB

Technical Specifications

Capacity: 512Mb
Organization: x16
Package: FBGA 60
Voltage: 1.8V
Status: In Production
RoHS: Yes
Part No. Green Version: IMX5116MDDEBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR-333 166Mhz 6ns
DDR-400 200MHz 5ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

C: 0°C to 70°C tA
I: -40°C to 85°C tA
H: -40°C to 105°C tA
X: -40°C to 125°C tA
tA = Ambient (Room) temperature

Download

Datasheet
Datasheet version 0.2 / 15.01.2015
Part No. Decoder
Environmental Informations
REACH Notification
RoHS Notification
Statement Conflict Materials


Request Email

SDRAM Models

  • Part No.
  • Capacity
  • Organization
  • Voltage
  • Package
  • Status
  • Speed
  • Temperature
  • Datasheet

IM1G16MDDCB

Technical Specifications

Capacity: 1Gb
Organization: x16
Package: FBGA 60 ball
Voltage: 1.8V
Status: Sampling
RoHS: Yes
Compatible/
Cross to:
Micron MT46H64M16LFBF, SK Hynix H5MS1G62BFR, Samsung K4X1G323PF, K4X1G323PE
Part No. Green Version: IM1G16MDDCBG
  Leaded versions are available on request
Speed-Grade
Data-Rate Clock Rate Cycle Time
DDR-333 166MHz 6ns
75 200MHz 5ns
Temperature Grade

* C = Commercial Temp, I = Industrial Temp

C: 0°C to 70°C tA
I: -40°C to 85°C tA
tA = Ambient (Room) temperature

Download

Datasheet
Datasheet version 1.0 / 09.12.2015
Environmental Informations
REACH Notification
RoHS Notification
Statement Conflict Materials


Request Email

* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp

ECC DRAMs are memory components with integrated error-correction logic. The ECC DRAMs internally generate parity-data for each data-block of 64 bit which allow to detect and correct single bit errors within each 64-bit internal data-block. As an example, a 1 Gigabit ECC DRAM internally consists of 16 million blocks of 64 bit. Even in the extremely rare case that each and every block would have a single bit error, the DRAM would still work perfectly as the ECC algorithm will correct all these errors. The error-correction algorithm is identical to what is used on server-memory-modules, but servers perform this algorithm by the CPU, while the ECC DRAMs perform the algorithm in the DRAM-chip itself. This is why ECC DRAMs make it possible to add a 'server level memory reliability' to any application, even if the CPU on your application is unable to perform ECC-correction.

With the ECC DRAM we did not change the technology used to manufacture the memory-array of the DRAMs, but we added a validation and correction algorithm to the device-internal logic.

Intelligent Memory´s ECC eXtra Robust DRAM components utilize a physical protection to the stored data-bits by holding the bits in larger capacitors, with a redundant data topology combined with built-in error correction features.

Explanation:
Each databit of a DRAM is stored in a very small capacitor holding a minimal electron-charge that defines the databit to be Zero or One. The data-integrity completely depends on these little capacitor-charges. On eXtra Robustness ECC DRAM each two cells are being 'twinned' to hold one databit, doubling the total electron-charge. As a result, the retention-time of each cell increases exponentially. Even increased leakage after cell-degradation does not cause a data-loss anymore as there is a much higher charge in each cell. External influences through radiation, antennas, etc can hardly flip the databits any more. The signal-margins (difference of charge-level for a Zero or a One) are much greater.

The eXtra Robustness (XR) DRAMs also have the ECC error correction functionality. In the very rare case that an XR ECC DRAM should have a bit-flip, the error-correction will catch and correct it. They are the most reliable DRAMs available.