The I'M Intelligent Memory eXtra Robustness DRAMs offer the highest level of memory robustness for outstanding reliable applications. We have achieved this through adding a physical protection to the stored data-bits by holding the bits in larger capacitors, with a redundant data topology. This larger electric charge and redundant topology used to store the data-bit reduces the impact of typical DRAM cell leakage effects, thus leads to a significant higher robustness, safer data structure and data-retention capabilities to work even in roughest environments. On top comes our integrated ECC error correction which is able to automatically detect and correct single-bit errors.
I'M eXtra Robustness ECC DRAMs are direct drop-in-replacements for conventional DRAMs and do not require any software or hardware adaptions. The data-correction is performed by the DRAM itself without any noticable delays or latencies, and completely independent from the processor.
We offer our XR ECC SDRAM products with operation temperature ranges up to 125° C (X-Grade).
* C = Commercial Temp, I = Industrial Temp, H = High Temp, X = Extreme Temp